プロシーディングス

第6回研究集会 (2009年度) (Proceedings of the fifth Thin-Films Materials and Devices Meeting)

• 100228041-1 - 5
  Development of Multi-Junction Technique for Semiconductor Substrates by Using Transparent and Conductive Polymer for Solar Cells' Application
  Hirofumi Kakemoto, Masahiko Hasumi, and Toshiyuki Sameshima
  Tokyo University of A&T

• 100228043-1 - 5
  Fabrication and Evaluation of SrTa₂O₆ Thin Films Using Chemical Solution Deposition Method
  Li Lu¹, Masahiro Echizen¹, Takashi Nishida¹, Kiyoshi Uchiyama¹, and Yukiharu Uraoka^{1,2
  1} Graduate School of Materials Science, Nara Institute of Science and Technology,
  8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
  ² CREST, Japan Science and Technology Agency

• 100228044-1 - 6
  Analysis of Impurity doping Using Free Carrier Absorption
  T. Sameshima¹, K. Ukawa¹, N. Sano², M. Naito³, and N. Hamamoto^{3
  1} Tokyo University of Agriculture and Technology
  ² Hightec Systems Corporation
  ³ Nissin Ion Equipment Co., Ltd. Koka

• 100228048-1 - 5
  Thin-Film Transistor Fabricated on the SrTiO₃ Epitaxial Film Annealed in an Oxygen Atmosphere
  Kosuke Uchida¹, Akira Yoshikawa¹, Kunihito Koumoto¹, Takeharu Kato², Yuichi Ikuhara^2,3, and Hiromichi Ohta^1,4,
  ¹ Nagoya University
  ² Japan Fine Ceramics Center
  ³ The University of Tokyo
  ⁴ Japan Science and Technology Agency

• 100228051-1 - 6
  Mechanism of Electrical Conduction in Polycrystalline InGaAs Films
  T. Okuzako, Y. Torii , and Y. Kajikawa
  Shimane University

• 100228074-1 - 6
  Electrical Properties of Thin Film Transistors with ZnO Channel Layer Deposited by Atomic Layer Deposition
  Yumi Kawamura¹, and Yukiharu Uraoka^{1,2
  1} Nara Institute of Science and Technology
  ² Japan Science and Technology Agency

• 100228075-1 - 6
  Pulse-Width Modulation with Current Uniformization Using Reduced Pixel Circuit for TFT-OLEDs
  Daisuke Suzuki¹, Masamichi Koike¹, Shigeki Sawamura², Masakazu Kato³, and Mutsumi Kimura^{1,4
  1} Ryukoku Universitymutsu@rins.ryukoku.ac.jp
  ² Nara Institute of Science and Technology
  ³ Osaka University
  ⁴ Innovative Materials and Processing Research Center

• 100228090-1 - 5
  Transistor Characteristics and Thermopower Modulation of KTaO3 Single Crystal Based Field-Effect Transistors with a-C12A7 Gate Dielectric
  Akira Yoshikawa¹, Kosuke Uchida¹, Kunihito Koumoto¹, Takeharu Kato², Yuichi Ikuhara^2,3, and Hiromichi Ohta^{1,4
  1} Nagoya University, Chikusa
  ² Japan Fine Ceramics Center
  ³ The University of Tokyo
  ⁴ Japan Science and Technology Agency

• 100228102-1 - 4
  Structural and Electrical Characterization of Y-Doped SrZrO₃ Thin Films for Solid Oxide Fuel Cells
  Kiyoshi Uchiyama¹, Yuri Isse¹, Yuichi Hori¹, Takashi Nishida¹, Yukiharu Uraoka^1,2, Tetsuro Kariya³, and Katsu Yanagimoto^{3
  1} Nara Institute of Science and Technology
  ² Japan Science and Technology Agency
  ³ Sanyo Special Steel Co., Ltd.

• 100228114-1 - 6
  Characterization of SiO_x/Si Interface Properties by Photo Induced Carrier
  M. Hasumi, J. Takenezawa, Y. Kanda, T. Nagao, and T. Sameshima
  Tokyo University of Agriculture and Technology

• 100228115-1 - 6
  Analysis of Microwave Absorption by Photo-Induced Carriers at PN
  T. Sameshima¹, M. Shimokawa¹, J. Takenezawa¹, T. Nagao¹, M. Hasumi¹, S. Yoshidomi¹, N. Sano², and T. Mizuno^{3
  1} Tokyo University of Agriculture and Technology
  ² Hightec Systems Corporation
  ³ Kanagawa University

• 100228116-1 - 6
  High-Pressure H₂O Vapor Heat Treatment for Characteristic Improvement in Crystalline Silicon Solar Cells
  M. Hasumi, T. Nagao, S. Yoshidomi, and T. Sameshima
  Tokyo University of Agriculture and Technology